31st Nano Congress for Future Advancements
Lancaster University, UK
Title: Semiconductor nanowire-based quantum materials for advanced enabling optoelectronics
Biography: Qiadong Zhuang
The control of optical and transport properties of semiconductor heterostructures is crucial for engineering new nanoscale photonic and electrical devices with diverse functions. One-dimensional structure offers a number of advances in tailoring material composition, optical and electrical properties, bandgap, and quantum confinement. Quantum material of core-shell nanowire is an outstanding example where the shell layer plays a key role in prompting materials properties and device performance.
Here, we report the realization of unique InAsSb-based core-shell nanowires and their application for room temperature infrared photodetection. The advances of these core-shell nanowires will be discussed. We will also demonstrate core-shell nanowire photodetectors with a dramatic dark current reduction in 2 orders of magnitude and a massive photocurrent (6-fold) in comparison with bare InAs nanowire photodetector. Our study demonstrates the potential of core-shell nanowires for the next generation of photodetectors on silicon.