9^th Nano Congress for Next Generation

Biography

Biography: B Huber

Abstract

Until now, any computer calculation is hampered by the basic computer architecture: All data has to be shift ed back and forth between fast but volatile random access memory (RAM) and the non-volatile but slow hard drive. Th e ultimate data memory combines non-volatile behaviour together with fast read and write access and a high integration density. Great potential lies in resistively switching memory cells, which consist of a conductor-insulator-conductor structure. By applying appropriate voltages, the cell resistance can be switched between at least two resistance states, corresponding to “0” and “1”. Th e non-volatile resistive memory off ers fast operation speed and low power consumption. We report inkjet printing of resistive memory cells, which provides two additional advantages: Firstly, the printing at ambient conditions makes cleanroom environment obsolete and considerably lowers the production costs. Secondly, printing on fl exible films opens the door to the up-and-coming fi eld of printed electronics, where resistive memory could be integrated in fl exible printed circuits. We use a standard FujiDimatix® 2831 inkjet printer for the printing of all 3 layers of our memory cells. For the conducting electrodes we use organic polymers and various commercial as well as in-house synthesized metal nanoparticle inks. The insulator layer consists of a printed methylsiloxane polymer. As a substrate we use rigid silicon wafers and fl exible polyimide fi lms. Th e cells show the potential for multi-bit data storage. With switching voltages below 3V and switching currents in the nanoampere regime, we already see a substantially lower power consumption compared to flash technology.